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Thin film silicon n–i–p solar cells deposited by VHF PECVD at 100 °C substrate temperature
Abstract/OtherAbstract :
The applicability of the very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) technique to the fabrication of solar cells in an n–i–p configuration at 100 °C substrate temperature is being investigated. Amorphous and microcrystalline silicon cells are made with the absorber layers grown in conditions close to the amorphous-to-microcrystalline transition, which proved to give the best quality layers. It was observed that post-deposition annealing at 100 °C resulted in a relative increase of the efficiency of up to 50% for both amorphous and microcrystalline cells. For an amorphous solar cell deposited on stainless steel foil with a non-textured back reflector, an efficiency of 5.3% was achieved. A too rough substrate (textured back reflector), with an rms roughness higher than 80 nm, was found to give rise to shunting paths.
Authors :
Brinza, M., Rath, J.K., Schropp, R.E.I.
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Subject :
Natuur- en Sterrenkunde, Natuur- en Sterrenkunde, Natuur- en Sterrenkunde
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Copyright Information :
(c) UU Universiteit Utrecht, 2008, Brinza, M., Rath, J.K., Schropp, R.E.I.
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Languages :  en    
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