| High Efficiency Multiple Bandgap Solar Cell Research. | |
Abstract/OtherAbstract
:
|
The development of GaAsP/GaP devices was made for stacking on silicon bottom cells to achieve high conversion efficiencies. The estimated efficiency of the completed devices was 21% AMO under concentrated light. A four terminal sack was incorporated to allow voltage matching wiring schemes to account for differing degradation of the individual devices in the space environment. Device optimization was defined for a bandgap difference of 0.6 to 0.8 eV, with projected efficiencies of 27% for GaAsP/GaP stacked onto GaAsSb or GaInAs, and GaAs on Ge or GaSb. |
Authors
:
|
Partain,L. D., Fraas,L. M., McLeod,P. S., Cape,J. A. |
Contributors
:
|
CHEVRON RESEARCH CO RICHMOND CALIF |
Publication Detail
:
|
Publisher : - Type : Text Format : text/html |
Date Detail
:
|
1986-06 |
Subject
:
|
NON-ELECTRICAL ENERGY CONVERSION, ELECTRIC POWER PRODUCTION AND DISTRIBUTION, *HETEROJUNCTIONS, *SOLAR CELLS, GALLIUM ARSENIDES, EFFICIENCY, ENERGY GAPS, SUBSTRATES, SILICON, GALLIUM PHOSPHIDES, GALLIUM ANTIMONIDES, CASCADE STRUCTURES., PE61101F, WUAFWALILIRP411 |
Coverage
:
|
- |
Relation
:
|
- |
Source
:
|
DTIC AND NTIS |
Copyright Information
:
|
APPROVED FOR PUBLIC RELEASE |
Other Details
:
|
Languages : en |
Export Citation
:
|
APA/MLA Format Download EndNote Download BibTex |
Previous Document: Exploratory Study of the Potential Effects of Exposure to Sonic Boom on Human Health. Volume 2. Epid...
Next Document: Ant communities in the grasslands of the Australian Capital Territory and the role of ants in the ec...