Document Detail


The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence.
MedLine Citation:
PMID:  25407288     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Single crystalline SrTiO3 doped with 0.1 wt% Nb was used as a model system to evaluate the role of the Schottky barrier in the resistive switching of perovskites. The Ti bottom electrode formed an ohmic contact in the Ni/Nb:SrTiO3/Ti stack, whereas the Ni top electrode created a strong Schottky barrier, which was reflected in a huge semi-circle in the impedance spectrum of the stack. Bipolar switching was achieved in the voltage range of -4 to 4 V for the stack, two clear resistance states were created by electric pulses, and the Schottky barrier heights corresponding to the high/low resistance states were experimentally determined. A direct relationship between the resistance state and the Schottky barrier height was thus established.
Authors:
Xue-Bing Yin; Zheng-Hua Tan; Xin Guo
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2014-11-18
Journal Detail:
Title:  Physical chemistry chemical physics : PCCP     Volume:  -     ISSN:  1463-9084     ISO Abbreviation:  Phys Chem Chem Phys     Publication Date:  2014 Nov 
Date Detail:
Created Date:  2014-11-19     Completed Date:  -     Revised Date:  2014-11-20    
Medline Journal Info:
Nlm Unique ID:  100888160     Medline TA:  Phys Chem Chem Phys     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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