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The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.
MedLine Citation:
PMID:  22469563     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
Authors:
Muhammad Usman; Vittorianna Tasco; Maria Teresa Todaro; Milena De Giorgi; Eoin P O'Reilly; Gerhard Klimeck; Adriana Passaseo
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Publication Detail:
Type:  Journal Article     Date:  2012-04-02
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Apr 
Date Detail:
Created Date:  2012-04-03     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  165202     Citation Subset:  IM    
Affiliation:
Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland.
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