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ALD/MLD of novel layer-engineered Zn-based inorganic-organic hybrid thin films using heterobifunctional 4-aminophenol as an organic precursor.
MedLine Citation:
PMID:  23319066     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Here we present novel hybrid inorganic-organic thin films of the (-Zn-O-C(6)H(4)-NH-)(n) type deposited in an atomic/molecular layer-by-layer manner through sequential gas-surface reactions of separately introduced inorganic (diethyl zinc) and organic (4-aminophenol) precursor pulses. The organic precursor employed is heterobifunctional (containing both hydroxyl and amino groups) and possesses a rigid benzene backbone; these precursor characteristics are believed to suppress the unwanted double surface reactions and promote the ideal growth mechanism such that the film thickness is linearly controlled by the number of deposition cycles. The appreciably high growth rate of ∼1.1 Å per cycle is found to remain constant in the deposition temperature range of 140-200 °C, but in practice our atomic/molecular layer deposition (ALD/MLD) process yields high-quality, uniform, smooth and relatively air-stable films even in a much wider temperature range from 140 up to 330 °C. The refractive index of the films is ∼1.94 ± 0.01 independent of the deposition temperature and the density ranges within 1.5-1.7 g cm(-3).
Authors:
Anjali Sood; Pia Sundberg; Maarit Karppinen
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2013-1-14
Journal Detail:
Title:  Dalton transactions (Cambridge, England : 2003)     Volume:  -     ISSN:  1477-9234     ISO Abbreviation:  Dalton Trans     Publication Date:  2013 Jan 
Date Detail:
Created Date:  2013-1-15     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101176026     Medline TA:  Dalton Trans     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Affiliation:
Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Finland. maarit.karppinen@aalto.fi.
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