Document Detail

The modification of the electrical property in double-walled carbon nanotube devices with a self-assembled monolayer of molecules.
MedLine Citation:
PMID:  19049024     Owner:  NLM     Status:  PubMed-not-MEDLINE    
We have investigated the electrical transports of double-walled carbon nanotube field effect transistors (DWNT-FETs) with modified contacts. The CNT/Au metal contacts of DWNT-FETs were modified with a self-assembled monolayer of 2-aminoethanethiol molecules. In ambient air, the contact-modified DWNT-FETs showed a decreased conductance in the p-channel (negative gate voltages) and an increased conductance in the n-channel (positive gate voltages), while the original device showed p-type transport. In a vacuum, the n-channel current in the contact-modified DWNT-FET started to rise. We observed a clear n-type transport in the high vacuum. Almost no changes in the gate threshold voltages were observed by means of the contact-modification with a self-assembled monolayer. While the semiconducting DWNT-FET showed a clear transition from a p-type to n-type transistor with contact modification, no apparent changes were observed in semi-metallic DWNT devices.
Eun-Kyoung Jeon; Hyo-Suk Kim; Byoung-Kye Kim; Ju-Jin Kim; Jeong-O Lee; Cheol Jin Lee
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  8     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2008 Sep 
Date Detail:
Created Date:  2008-12-03     Completed Date:  2008-12-19     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  4349-52     Citation Subset:  -    
Department of Physics, Chonbuk National University, Jeonju 561-756, Korea.
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