| The effect of interfacial structure on the transistor properties: Probing the role of surface modification of gate dielectrics with self-assembled monolayer using organic single-crystal field-effect transistors. | |
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MedLine Citation:
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PMID: 21539400 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Single-crystal field-effect transistors based on 2,3-dimethylpentacene have been used to probe the effect of surface modification of insulating dielectric SiO2 layer on the transistor characteristics. Self-assembled monolayers (SAMs) of different chain lengths and functional groups were used to systematically modify the structure and property of the semiconductor/dielectric interface. The charge carrier mobility as a function of SAM used for surface modification was analyzed. The character of the terminal functional group, as well the mechanic treatment (rubbing) of the monolayer much influences the carrier mobility. Introduction of polar end group (donor or acceptor type) decreases the mobility compare to a non-polar end group. Pre-rubbing of the monolayer serves to increase the charge carrier mobility by a factor of 2 - 4 folds. The results are interpreted in terms of the orderliness of the monolayer at the outmost interface which affect the trapping sites density or the smoothness of the potential surface that affect the carrier transport. |
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Authors:
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M Minarul Islam; Someshwar Pola; Yu-Tai Tao |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2011-5-4 |
Journal Detail:
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Title: ACS applied materials & interfaces Volume: - ISSN: 1944-8244 ISO Abbreviation: - Publication Date: 2011 May |
Date Detail:
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Created Date: 2011-5-4 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101504991 Medline TA: ACS Appl Mater Interfaces Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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