| Ab Initio computer simulation of the early stages of crystallization: application to ge_{2}sb_{2}te_{5} phase-change materials. | |
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MedLine Citation:
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PMID: 22107213 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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By virtue of the ultrashort phase-transition time of phase-change memory materials, e.g., Ge_{2}Sb_{2}Te_{5}, we successfully reproduce the early stages of crystallization in such a material using ab initio molecular-dynamics simulations. A stochastic distribution in the crystallization onset time is found, as generally assumed in classical nucleation theory. The critical crystal nucleus is estimated to comprise 5-10 (Ge,Sb)_{4}Te_{4} cubes. Simulated growth rates of crystalline clusters in amorphous Ge_{2}Sb_{2}Te_{5} are consistent with extrapolated experimental measurements. The formation of ordered planar structures in the amorphous phase plays a critical role in lowering the interfacial energy between crystalline clusters and the amorphous phase, which explains why Ge-Sb-Te materials exhibit ultrafast crystallization. |
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Authors:
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T H Lee; S R Elliott |
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Publication Detail:
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Type: Journal Article Date: 2011-09-27 |
Journal Detail:
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Title: Physical review letters Volume: 107 ISSN: 1079-7114 ISO Abbreviation: Phys. Rev. Lett. Publication Date: 2011 Sep |
Date Detail:
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Created Date: 2011-11-23 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0401141 Medline TA: Phys Rev Lett Country: United States |
Other Details:
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Languages: eng Pagination: 145702 Citation Subset: IM |
Affiliation:
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Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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