Document Detail


A compact model for early electromigration failures of copper dual-damascene interconnects.
MedLine Citation:
PMID:  21966026     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes.
Authors:
R L de Orio; H Ceric; S Selberherr
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Publication Detail:
Type:  JOURNAL ARTICLE    
Journal Detail:
Title:  Microelectronics and reliability     Volume:  51     ISSN:  0026-2714     ISO Abbreviation:  -     Publication Date:  2011 Sep 
Date Detail:
Created Date:  2011-10-3     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101473207     Medline TA:  Microelectron Reliab     Country:  -    
Other Details:
Languages:  ENG     Pagination:  1573-1577     Citation Subset:  -    
Affiliation:
Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria.
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