| A compact model for early electromigration failures of copper dual-damascene interconnects. | |
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MedLine Citation:
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PMID: 21966026 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution can be conveniently obtained. Furthermore, it is shown that the simulation results provide a reasonable estimation for the lifetimes. |
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Authors:
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R L de Orio; H Ceric; S Selberherr |
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Publication Detail:
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Type: JOURNAL ARTICLE |
Journal Detail:
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Title: Microelectronics and reliability Volume: 51 ISSN: 0026-2714 ISO Abbreviation: - Publication Date: 2011 Sep |
Date Detail:
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Created Date: 2011-10-3 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101473207 Medline TA: Microelectron Reliab Country: - |
Other Details:
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Languages: ENG Pagination: 1573-1577 Citation Subset: - |
Affiliation:
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Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Wien, Austria. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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