| Visible light-responsive titanium dioxide thin film prepared by reactive sputtering. | |
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MedLine Citation:
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PMID: 21456237 Owner: NLM Status: In-Process |
Abstract/OtherAbstract:
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TiO2 is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of TiO2 films to visible spectrum range, we have made the impurity level within a band-gap of TiO2 thin film by introduction of oxygen vacancy. Oxygen-defected TiO2 photo-catalyst have prepared by reactive sputtering with the partial pressure of Ar:O2 = 76.7:23.3 approximately 98.5:1.5 ratios. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is 2.9%. And the photocatalytic activity was realized at 400 nm wavelength. |
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Authors:
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Woon-Jo Jeong; In-Seob Moon; Soon-Kye Cho; Hyeon-Hun Yang; Gye-Choon Park; Hal-Bon Gu; Ki-Joong Kim; Ho-Geun Ahn |
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Publication Detail:
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Type: Journal Article; Research Support, Non-U.S. Gov't |
Journal Detail:
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Title: Journal of nanoscience and nanotechnology Volume: 11 ISSN: 1533-4880 ISO Abbreviation: J Nanosci Nanotechnol Publication Date: 2011 Feb |
Date Detail:
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Created Date: 2011-04-01 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088195 Medline TA: J Nanosci Nanotechnol Country: United States |
Other Details:
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Languages: eng Pagination: 1565-8 Citation Subset: IM |
Affiliation:
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Department of Information Communication, Chosun College University of Science & Technology, 290 Seosuk-dong, Dong-gu, Gwangju 501-744, Korea. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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