| Vapor-phase synthesis of mesoporous SiO2-P2O5 thin films. | |
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MedLine Citation:
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PMID: 17373837 Owner: NLM Status: MEDLINE |
Abstract/OtherAbstract:
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Mesoporous SiO2-P2O5 films were synthesized from the vapor phase onto a silicon substrate. First, a precursor solution of cetyltrimethylammonium bromide (C16TAB), H3PO4, ethanol, and water was deposited on a silicon substrate by a spin-coating method. Then, the C16TAB-H3PO4 composite film was treated with tetraethoxysilane (TEOS) vapor at 90-180 degrees C for 2.5 h. The H3PO4-C16TAB composite formed a hexagonal structure on the silicon substrate before vapor treatment. The TEOS molecules penetrated into the film without a phase transition. The periodic mesostructure of the SiO2-P2O5 films was retained after calcination. The calcined films showed a high proton conductivity of about 0.55 S/cm at room temperature. The molar ratio of P/Si in the SiO2-P2O5 film was as high as 0.43, a level that was not attained by a premixing sol-gel method. The high phosphate group content and the ordered periodic mesostructure contributed to the high proton conductivity. |
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Authors:
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Norikazu Nishiyama; Junji Kaihara; Yuko Nishiyama; Yasuyuki Egashira; Korekazu Ueyama |
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Publication Detail:
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Type: Journal Article Date: 2007-03-21 |
Journal Detail:
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Title: Langmuir : the ACS journal of surfaces and colloids Volume: 23 ISSN: 0743-7463 ISO Abbreviation: Langmuir Publication Date: 2007 Apr |
Date Detail:
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Created Date: 2007-04-17 Completed Date: 2007-06-12 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 9882736 Medline TA: Langmuir Country: United States |
Other Details:
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Languages: eng Pagination: 4746-8 Citation Subset: IM |
Affiliation:
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Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan. nisiyama@cheng.es.osaka-u.ac.jp |
Export Citation:
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| MeSH Terms | |
Descriptor/Qualifier:
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Membranes, Artificial* Particle Size Phosphorus Compounds / chemical synthesis*, chemistry Porosity Silicon / chemistry Silicon Dioxide / chemical synthesis*, chemistry Surface Properties Temperature |
| Chemical | |
Reg. No./Substance:
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0/Membranes, Artificial; 0/Phosphorus Compounds; 1314-56-3/phosphorus pentoxide; 7440-21-3/Silicon; 7631-86-9/Silicon Dioxide |
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