Document Detail

Vapor-phase synthesis of mesoporous SiO2-P2O5 thin films.
MedLine Citation:
PMID:  17373837     Owner:  NLM     Status:  MEDLINE    
Mesoporous SiO2-P2O5 films were synthesized from the vapor phase onto a silicon substrate. First, a precursor solution of cetyltrimethylammonium bromide (C16TAB), H3PO4, ethanol, and water was deposited on a silicon substrate by a spin-coating method. Then, the C16TAB-H3PO4 composite film was treated with tetraethoxysilane (TEOS) vapor at 90-180 degrees C for 2.5 h. The H3PO4-C16TAB composite formed a hexagonal structure on the silicon substrate before vapor treatment. The TEOS molecules penetrated into the film without a phase transition. The periodic mesostructure of the SiO2-P2O5 films was retained after calcination. The calcined films showed a high proton conductivity of about 0.55 S/cm at room temperature. The molar ratio of P/Si in the SiO2-P2O5 film was as high as 0.43, a level that was not attained by a premixing sol-gel method. The high phosphate group content and the ordered periodic mesostructure contributed to the high proton conductivity.
Norikazu Nishiyama; Junji Kaihara; Yuko Nishiyama; Yasuyuki Egashira; Korekazu Ueyama
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Publication Detail:
Type:  Journal Article     Date:  2007-03-21
Journal Detail:
Title:  Langmuir : the ACS journal of surfaces and colloids     Volume:  23     ISSN:  0743-7463     ISO Abbreviation:  Langmuir     Publication Date:  2007 Apr 
Date Detail:
Created Date:  2007-04-17     Completed Date:  2007-06-12     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9882736     Medline TA:  Langmuir     Country:  United States    
Other Details:
Languages:  eng     Pagination:  4746-8     Citation Subset:  IM    
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan.
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MeSH Terms
Membranes, Artificial*
Particle Size
Phosphorus Compounds / chemical synthesis*,  chemistry
Silicon / chemistry
Silicon Dioxide / chemical synthesis*,  chemistry
Surface Properties
Reg. No./Substance:
0/Membranes, Artificial; 0/Phosphorus Compounds; 1314-56-3/phosphorus pentoxide; 7440-21-3/Silicon; 7631-86-9/Silicon Dioxide

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