Document Detail


Universality of persistence exponents in two-dimensional Ostwald ripening.
MedLine Citation:
PMID:  20366113     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
We measured persistence exponents theta(phi) of Ostwald ripening in two dimensions, as a function of the area fraction phi occupied by coarsening domains. The values of theta(phi) in two systems, succinonitrile and brine, quenched to their liquid-solid coexistence region, compare well with one another, providing compelling evidence for the universality of the one-parameter family of exponents. For small phi, theta(phi) approximately = 0.39phi, as predicted by a model that assumes no correlations between evolving domains. These constitute the first measurements of persistence exponents in the case of phase transitions with a conserved order parameter.
Authors:
Jordi Soriano; Ido Braslavsky; Di Xu; Oleg Krichevsky; Joel Stavans
Related Documents :
16906923 - Finite-size scaling of energylike quantities in percolation.
11736093 - Calculation of the anomalous exponents in the rapid-change model of passive scalar adve...
18003563 - Combination of multiple light paths in pulse oximetry: the finger ring example.
Publication Detail:
Type:  Journal Article     Date:  2009-11-24
Journal Detail:
Title:  Physical review letters     Volume:  103     ISSN:  1079-7114     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2009 Nov 
Date Detail:
Created Date:  2010-04-06     Completed Date:  2010-06-18     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  226101     Citation Subset:  -    
Affiliation:
Departament d'ECM, Facultat de F?sica, Universitat de Barcelona, Diagonal 647, E-08028 Barcelona, Spain.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms
Descriptor/Qualifier:

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


Previous Document:  Effect of surface curvature on critical adsorption.
Next Document:  Band gap narrowing of titanium oxide semiconductors by noncompensated anion-cation codoping for enha...