| Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. | |
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MedLine Citation:
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PMID: 20617803 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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We report the demonstration of single-nanowire photodetectors relying on carrier generation in GaN/AlN QDiscs. Two nanowire samples containing QDiscs of different thicknesses are analyzed and compared to a reference binary n-i-n GaN nanowire sample. The responsivity of a single wire QDisc detector is as high as 2 x 10(3) A/W at lambda = 300 nm at room temperature. We show that the insertion of an axial heterostructure drastically reduces the dark current with respect to the binary nanowires and enhances the photosensitivity factor (i.e., the ratio between the photocurrent and the dark current) up to 5 x 10(2) for an incoming light intensity of 5 mW/cm(2). Photocurrent spectroscopy allows identification of the spectral contribution related to carriers generated within large QDiscs, which lies below the GaN band gap due to the quantum confined Stark effect. |
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Authors:
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L Rigutti; M Tchernycheva; A De Luna Bugallo; G Jacopin; F H Julien; L F Zagonel; K March; O Stephan; M Kociak; R Songmuang |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Nano letters Volume: 10 ISSN: 1530-6992 ISO Abbreviation: Nano Lett. Publication Date: 2010 Aug |
Date Detail:
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Created Date: 2010-08-11 Completed Date: 2010-11-22 Revised Date: 2010-12-10 |
Medline Journal Info:
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Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: United States |
Other Details:
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Languages: eng Pagination: 2939-43 Citation Subset: - |
Affiliation:
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Institut d'Electronique Fondamentale, University of Paris Sud XI, UMR 8622 CNRS, 91405 Orsay, France. lorenzo.rigutti@ief.u-psud.fr |
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Erratum In:
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Nano Lett. 2010 Oct 13;10(10):4284 |
From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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