Document Detail


Two-phase simulation of the crystalline silicon melting line at pressures from -1 to 3 GPa.
MedLine Citation:
PMID:  22894359     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
Results of a numerical investigation of crystalline silicon melting line within the range of pressures from -1 to 3 GPa are presented. A two-phase molecular dynamics method is applied to obtain temperature, pressure, and densities of solid and liquid phases on the melting line. Using a special procedure we ensure the strict control of the two-phase equilibrium in the simulation cell. To describe the interaction between the atoms four classic potentials have been chosen: the Stillinger-Weber one and three modified variants of the Tersoff potential. For the Stillinger-Weber and Tersoff potentials in the modification by Kumagai-Izumi-Hara-Sakai a good coincidence with experimental data on crystalline Si melting temperature is obtained within the range of pressure from 0 to 3 GPa. Calculations of the solid and liquid phase densities on the silicon melting line for the Stillinger-Weber potential are also in close agreement with experiments.
Authors:
V S Dozhdikov; A Yu Basharin; P R Levashov
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  The Journal of chemical physics     Volume:  137     ISSN:  1089-7690     ISO Abbreviation:  J Chem Phys     Publication Date:  2012 Aug 
Date Detail:
Created Date:  2012-08-16     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0375360     Medline TA:  J Chem Phys     Country:  United States    
Other Details:
Languages:  eng     Pagination:  054502     Citation Subset:  IM    
Affiliation:
Joint Institute for High Temperatures RAS, Izhorskaya 13 bldg. 2, Moscow 125412, Russia.
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