Document Detail

Tuning the limiting thickness of a thin oxide layer on al(111) with oxygen gas pressure.
MedLine Citation:
PMID:  21838375     Owner:  NLM     Status:  In-Data-Review    
We report an x-ray photoelectron spectroscopy study of the oxidation of Al(111) surfaces at room temperature, which reveals that the limiting thickness of an aluminum oxide film can be tuned by using oxygen pressure. This behavior is attributed to a strong dependence of the kinetic potential on the oxygen gas pressure. The coverage of oxygen anions on the surface of the oxide film depends on the gas pressure leading to a pressure dependence of the kinetic potential. Our results indicate that a significantly large oxygen pressure (>1  Torr) is required to develop the saturated surface coverage of oxygen ions, which results in the maximum kinetic potential and therefore the saturated limiting thickness of the oxide film.
Na Cai; Guangwen Zhou; Kathrin Müller; David E Starr
Related Documents :
2688285 - Brain hypoperfusion post-resuscitation.
6952695 - Effect of missile velocity on the pathophysiology of injuries.
1598825 - Anti-shock effect of cyproheptadine in rabbit.
17414425 - Vasopressin mediates the pressor effect of hypertonic saline solution in endotoxic shock.
18250145 - Hypertension and microvascular remodelling.
24323165 - Enhanced oval window and blocked round window passages for middle-inner ear transportat...
Publication Detail:
Type:  Journal Article     Date:  2011-07-11
Journal Detail:
Title:  Physical review letters     Volume:  107     ISSN:  1079-7114     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2011 Jul 
Date Detail:
Created Date:  2011-08-15     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  035502     Citation Subset:  IM    
Department of Mechanical Engineering and Multidisciplinary Program in Materials Science and Engineering, State University of New York, Binghamton, New York 13902, USA.
Export Citation:
APA/MLA Format     Download EndNote     Download BibTex
MeSH Terms

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine

Previous Document:  Mechanisms of postsynthesis doping of boron nitride nanostructures with carbon from first-principles...
Next Document:  Limits on passivating defects in semiconductors: the case of si edge dislocations.