Document Detail


Transparent nano-floating gate memory on glass.
MedLine Citation:
PMID:  20657037     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
We construct fully transparent nano-floating gate memory devices on a glass substrate. These memory thin-film transistors consist of channel layers of ZnO films, electrodes of Al/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of approximately 71% in the visible region. Their electron mobility, on/off ratio, and threshold voltage shift are estimated to be 0.92 cm(2) V( - 1) s( - 1), about 10(4), and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention are characterized in this study. Our study suggests that our memory devices have great potential for realizing transparent systems-on-glass.
Authors:
Byoungjun Park; Kyoungah Cho; Sungsu Kim; Sangsig Kim
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't     Date:  2010-07-26
Journal Detail:
Title:  Nanotechnology     Volume:  21     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2010 Aug 
Date Detail:
Created Date:  2010-07-27     Completed Date:  2010-11-03     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  335201     Citation Subset:  -    
Affiliation:
Department of Electrical Engineering, Korea University, 5-1 Anam-dong, Seongbuk-gu, Seoul 136-701, Republic of Korea.
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