Document Detail

Transient behavior of infrared photoconductors: application of a numerical model.
MedLine Citation:
PMID:  18319745     Owner:  NLM     Status:  In-Data-Review    
A numerical model for the transient response of extrinsic photoconductors is applied to the behavior of Ge:Ga and GaAs:Te detectors. Photoconductors display a two-component response to changes in illumination. The characteristic time and magnitude for the slow component have been studied as a function of background flux, applied field, temperature, device length, and signal size. For large-signal applications, the background flux affects the transient response even when the signal is orders of magnitude greater than the background. Experimental results are presented to support key predictions of the modeling. Because the ratio of fast to slow components is independent of both background and signal size, we propose the operation of detectors in such a way that final signal levels are derived from the fast component.
N M Haegel; J C Simoes; A M White; J W Beeman
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Applied optics     Volume:  38     ISSN:  0003-6935     ISO Abbreviation:  Appl Opt     Publication Date:  1999 Apr 
Date Detail:
Created Date:  2008-03-05     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0247660     Medline TA:  Appl Opt     Country:  United States    
Other Details:
Languages:  eng     Pagination:  1910-9     Citation Subset:  -    
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