| Towards the Controlled Synthesis of Hexagonal Boron Nitride Films. | |
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MedLine Citation:
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PMID: 22702240 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters and as a dielectric for nanoelectronics devices. In this paper we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy. |
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Authors:
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Ariel Ismach; Harry Chou; Domingo A Ferrer; Yaping Wu; Stephen McDonnell; Herman C Floresca; Alan Covacevich; Cody Pope; Richard Piner; Moon J Kim; Robert M Wallace; Luigi Colombo; Rodney S Ruoff |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2012-6-18 |
Journal Detail:
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Title: ACS nano Volume: - ISSN: 1936-086X ISO Abbreviation: - Publication Date: 2012 Jun |
Date Detail:
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Created Date: 2012-6-18 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101313589 Medline TA: ACS Nano Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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