Document Detail

Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%.
MedLine Citation:
PMID:  23033072     Owner:  NLM     Status:  In-Data-Review    
Strained Si nanowires are among the most promising transistor structures for implementation in very large-scale integration due to of their superior electrostatic control and enhanced transport properties. Realizing even higher strain levels within such nanowires are thus one of the current challenges in microelectronics. Here we achieve 4.5% of elastic strain (7.6 GPa uniaxial tensile stress) in 30 nm wide Si nanowires, which considerably exceeds the limit that can be obtained using SiGe-based virtual substrates. Our approach is based on strain accumulation mechanisms in suspended dumbbell-shaped bridges patterned on strained Si-on-insulator, and is compatible with complementary metal oxide semiconductor fabrication. Potentially, this method can be applied to any tensile prestrained layer, provided the layer can be released from the substrate, enabling the fabrication of a variety of strained semiconductors with unique properties for applications in nanoelectronics, photonics and photovoltaics. This method also opens up opportunities for research on strained materials.
R A Minamisawa; M J Süess; R Spolenak; J Faist; C David; J Gobrecht; K K Bourdelle; H Sigg
Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Nature communications     Volume:  3     ISSN:  2041-1723     ISO Abbreviation:  Nat Commun     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-03     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101528555     Medline TA:  Nat Commun     Country:  England    
Other Details:
Languages:  eng     Pagination:  1096     Citation Subset:  IM    
Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen, Switzerland.
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