Document Detail

Top-Down Fabricated Silicon-Nanowire-Based Field-Effect Transistor Device on a (111) Silicon Wafer.
MedLine Citation:
PMID:  23143874     Owner:  NLM     Status:  Publisher    
The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW.
Xiao Yu; Yuchen Wang; Hong Zhou; Yanxiang Liu; Yi Wang; Tie Li; Yuelin Wang
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-12
Journal Detail:
Title:  Small (Weinheim an der Bergstrasse, Germany)     Volume:  -     ISSN:  1613-6829     ISO Abbreviation:  Small     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101235338     Medline TA:  Small     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Copyright Information:
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
State Key Laboratory of Transducer Technology & Science and Technology on Microsystem Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
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