Document Detail


Ti-doped Indium Tin Oxide Thin Films for Transparent Field-Effect Transistors: Control of Charge Carrier Density and Crystalline Structure.
MedLine Citation:
PMID:  21663320     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Indium tin oxide (ITO) film has been known as a representative transparent conducting oxide for organic light-emitting diodes, liquid crystal display, and solar cell application. The extension of ITO from the passive electrode to an active channel layer for transparent field-effect transistors (FETs), however, has been largely limited due to its high carrier density (>10^20 cm-3), wide-band gap, and polycrystalline nature. Here, we demonstrate that the control of cation composition in ITO-based oxide films via solid doping of titanium (Ti), can optimize the carrier concentration as well as the suppression of film crystallization. On 120 nm thick SiO2/Mo (200 nm)/glass substrate, transparent n-type FETs containing approximately 4 at.% Ti-doped ITO film, fabricated by co-sputtering of ITO and TiO2, exhibit high electron mobility up to 13.4 cm2V-1s-1, low subthreshold gate swing of 0.25 Vdecade-1, and high Ion/Ioff ratio of >10^8.
Authors:
Ji-In Kim; Kwang Hwan Ji; Mi Jang; Hoichang Yang; Rino Choi; Jae Kyeong Jeong
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2011-6-13
Journal Detail:
Title:  ACS applied materials & interfaces     Volume:  -     ISSN:  1944-8252     ISO Abbreviation:  -     Publication Date:  2011 Jun 
Date Detail:
Created Date:  2011-6-13     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101504991     Medline TA:  ACS Appl Mater Interfaces     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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