| Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain. | |
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MedLine Citation:
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PMID: 22905489 Owner: NLM Status: In-Process |
Abstract/OtherAbstract:
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The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques. |
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Authors:
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Yiming Li; Hui-Wen Cheng; Chi-Hong Hwang |
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Publication Detail:
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Type: Journal Article; Research Support, Non-U.S. Gov't |
Journal Detail:
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Title: Journal of nanoscience and nanotechnology Volume: 12 ISSN: 1533-4880 ISO Abbreviation: J Nanosci Nanotechnol Publication Date: 2012 Jun |
Date Detail:
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Created Date: 2012-08-21 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088195 Medline TA: J Nanosci Nanotechnol Country: United States |
Other Details:
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Languages: eng Pagination: 4485-8 Citation Subset: IM |
Affiliation:
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Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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