Document Detail

Threshold voltage fluctuation in 16-nm-gate FinFets induced by random work function of nanosized metal grain.
MedLine Citation:
PMID:  22905489     Owner:  NLM     Status:  In-Process    
The random work-function (WK) induced threshold voltage fluctuation (sigmaVth) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigmaVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.
Yiming Li; Hui-Wen Cheng; Chi-Hong Hwang
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  12     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2012 Jun 
Date Detail:
Created Date:  2012-08-21     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  4485-8     Citation Subset:  IM    
Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan.
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