Document Detail

Thin-film optical sensors with silicon-compatible materials.
MedLine Citation:
PMID:  18259323     Owner:  NLM     Status:  In-Data-Review    
Antireflection filters based on multilayer stacks of dielectric and polysilicon films on monocrystalline silicon combined with charge collection in different (poly)Si layers can be used to realize sensors with a programmable spectral response controlled by weighted summing of the photocurrents detected in the polysilicon and the substrate. Thus, employing both interference and selective absorption of light yields increased photoelectric efficiency and improved flexibility of spectral control and enables on-chip integration of the detector(s) with the signal conditioning and processing circuits. The potential of thin-film color sensors has been evaluated for this purpose. However, for practical implementation of such structures the problems associated with the realization of reliable photodetectors in polysilicon must also be considered. Phosphorus passivation of the grain-boundary states has been employed to yield polysilicon photodiodes with improved electrical characteristics and reliable light and color detection. We present the design methods of thin-film color sensors employing silicon-compatible materials only. The measurement results of a fabricated structure fully demonstrate that such sensors can be realized with good spectral selectivity.
D P Poenar; R F Wolffenbuttel
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Applied optics     Volume:  36     ISSN:  0003-6935     ISO Abbreviation:  Appl Opt     Publication Date:  1997 Jul 
Date Detail:
Created Date:  2008-02-08     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0247660     Medline TA:  Appl Opt     Country:  United States    
Other Details:
Languages:  eng     Pagination:  5109-21     Citation Subset:  -    
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