Document Detail


Thickness-independent transport channels in topological insulator bi_{2}se_{3} thin films.
MedLine Citation:
PMID:  23005664     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
With high quality topological insulator Bi_{2}Se_{3} thin films, we report thickness-independent transport properties over wide thickness ranges. Conductance remained nominally constant as the sample thickness changed from 256 to ∼8  QL (where QL refers to quintuple layer, 1  QL≈1  nm). Two surface channels of very different behaviors were identified. The sheet carrier density of one channel remained constant at ∼3.0×10^{13}  cm^{-2} down to 2 QL, while the other, which exhibited quantum oscillations, remained constant at ∼8×10^{12}  cm^{-2} only down to ∼8  QL. The weak antilocalization parameters also exhibited similar thickness independence. These two channels are most consistent with the topological surface states and the surface accumulation layers, respectively.
Authors:
Namrata Bansal; Yong Seung Kim; Matthew Brahlek; Eliav Edrey; Seongshik Oh
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Publication Detail:
Type:  Journal Article     Date:  2012-09-12
Journal Detail:
Title:  Physical review letters     Volume:  109     ISSN:  1079-7114     ISO Abbreviation:  Phys. Rev. Lett.     Publication Date:  2012 Sep 
Date Detail:
Created Date:  2012-09-25     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0401141     Medline TA:  Phys Rev Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  116804     Citation Subset:  IM    
Affiliation:
Department of Electrical and Computer Engineering, Rutgers, The State University of New Jersey, 94 Brett Road, Piscataway, New Jersey 08854, USA.
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