Document Detail


Thermal conductivity reduction of crystalline silicon by high-pressure torsion.
MedLine Citation:
PMID:  25024687     Owner:  NLM     Status:  PubMed-not-MEDLINE    
Abstract/OtherAbstract:
We report a dramatic and irreversible reduction in the lattice thermal conductivity of bulk crystalline silicon when subjected to intense plastic strain under a pressure of 24 GPa using high-pressure torsion (HPT). Thermal conductivity of the HPT-processed samples were measured using picosecond time domain thermoreflectance. Thermal conductivity measurements show that the HPT-processed samples have a lattice thermal conductivity reduction by a factor of approximately 20 (from intrinsic single crystalline value of 142 Wm(-1) K(-1) to approximately 7.6 Wm(-1) K(-1)). Thermal conductivity reduction in HPT-processed silicon is attributed to the formation of nanograin boundaries and metastable Si-III/XII phases which act as phonon scattering sites, and because of a large density of lattice defects introduced by HPT processing. Annealing the samples at 873 K increases the thermal conductivity due to the reduction in the density of secondary phases and lattice defects.
Authors:
Sivasankaran Harish; Mitsuru Tabara; Yoshifumi Ikoma; Zenji Horita; Yasuyuki Takata; David G Cahill; Masamichi Kohno
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Publication Detail:
Type:  Journal Article     Date:  2014-06-28
Journal Detail:
Title:  Nanoscale research letters     Volume:  9     ISSN:  1931-7573     ISO Abbreviation:  Nanoscale Res Lett     Publication Date:  2014  
Date Detail:
Created Date:  2014-07-15     Completed Date:  2014-07-15     Revised Date:  2014-07-17    
Medline Journal Info:
Nlm Unique ID:  101279750     Medline TA:  Nanoscale Res Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  326     Citation Subset:  -    
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