Document Detail

Sulfur passivation and contact methods for GaAs nanowire solar cells.
MedLine Citation:
PMID:  21454946     Owner:  NLM     Status:  Publisher    
The effect of sulfur passivation on core-shell p-n junction GaAs nanowire (NW) solar cells has been investigated. Devices of two types were investigated, consisting of indium tin oxide contact dots or opaque Au finger electrodes. Lateral carrier transport from the NWs to the contact fingers was achieved via a p-doped GaAs surface conduction layer. NWs between the opaque contact fingers had sidewall surfaces exposed for passivation by sulfur. The relative cell efficiency increased by 19% upon passivation. The contribution of the thin film grown between the NWs to the total cell efficiency was estimated by removing the NWs using a sonication procedure. Mechanisms of carrier transport and photovoltaic effects are discussed on the basis of spatially resolved laser scanning measurements.
N Tajik; Z Peng; P Kuyanov; R R Lapierre
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2011-4-01
Journal Detail:
Title:  Nanotechnology     Volume:  22     ISSN:  1361-6528     ISO Abbreviation:  -     Publication Date:  2011 Apr 
Date Detail:
Created Date:  2011-4-1     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  -    
Other Details:
Languages:  ENG     Pagination:  225402     Citation Subset:  -    
Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7, Canada.
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