Document Detail

Strong Charge-Transfer Doping of 1 to 10 Layer Graphene by NO2.
MedLine Citation:
PMID:  22276666     Owner:  NLM     Status:  Publisher    
We use resonance Raman and optical reflection contrast methods to study charge transfer in 1-10 layer (1L - 10L) thick graphene samples on which NO2 has adsorbed. Electrons transfer from the graphene to NO2, leaving the graphene layers doped with mobile delocalized holes. Doping follows a Langmuir-type isotherm as a function of NO2 pressure. Raman and optical contrast spectra provide independent, self-consistent measures of the hole density and distribution as a function of the number of layers (N). At high doping, as the Fermi level shift EF reaches half the laser photon energy, a resonance in the graphene G mode Raman intensity is observed. We observe a decrease of graphene optical absorption in the near-IR that is due to hole doping. Highly doped graphene is more optically transparent, and much more electrically conductive, than intrinsic graphene In thicker samples holes are effectively confined near the surface, and in these samples a small band gap opens near the surface. We discuss the properties and versatility of these highly charge-transfer doped, few layer thick graphene samples as a new class of electronic materials.
Andrew C Crowther; Amanda Ghassaei; Naeyoung Jung; Louis E Brus
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-1-25
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  -     Publication Date:  2012 Jan 
Date Detail:
Created Date:  2012-1-26     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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