| Stress imagining of semiconductor surface by tip-enhanced Raman spectroscopy. | |
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MedLine Citation:
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PMID: 18304075 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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Tip-enhanced Raman imaging of strained silicon reveals the property of nanoscale stress imposed on the lattice. Our approach relies on the highly localized excitation provided by a metallized tip. Surface sensitive detections in nanoscale are realized by a reflection-mode configuration combined with 442-nm excitation and a silver-coated silicon nitride tip. The background signals from an underlying silicon germanium layer and a tip are well suppressed. The quantitative stress analysis is made on the basis of the Raman shift of the Si-Si phonon mode. We succeeded in visualizing the localized stress with a spatial resolution down to 25 nm whereas a conventional micro Raman technique provides only a uniform image because of the averaging effect within a diffraction-limited focused spot. |
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Authors:
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Y Saito; M Motohashi; N Hayazawa; S Kawata |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Journal of microscopy Volume: 229 ISSN: 1365-2818 ISO Abbreviation: J Microsc Publication Date: 2008 Feb |
Date Detail:
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Created Date: 2008-02-28 Completed Date: 2008-03-24 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0204522 Medline TA: J Microsc Country: England |
Other Details:
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Languages: eng Pagination: 217-22 Citation Subset: - |
Affiliation:
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RIKEN (The Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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