Document Detail


Straining Nanomembranes via Highly Mismatched Heteroepitaxial Growth: InAs Islands on Compliant Si Substrates.
MedLine Citation:
PMID:  23046451     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Freestanding, edge-supported silicon nanomembranes are defined by selective underetching of patterned silicon-on-insulator substrates. The membranes are afterwards introduced into a molecular beam epitaxy chamber and overgrown with InAs, resulting in the formation of InAs islands on flat areas and at the top of the Si nanomembranes. A detailed analysis of sample morphology, island structure, and strain is carried out. Scanning electron microscopy shows that the membrane stays intact during overgrowth. Atomic force microscopy reveals a lower island density on top of the freestanding membranes, denoting a modified wetting or diffusivity in these areas. An observed buckling of the membrane indicates a strain transfer from the InAs islands to the compliant substrate. X-ray diffraction and finite-element modeling indicate a non uniform strain state of the island ensemble grown on the freestanding membrane. A simulation of the buckling of the nanomembranes indicates that the islands at the center of the freestanding area are highly strained, whereas islands on the border tend to be fully relaxed. Finally, continuum elasticity calculations suggest that for a sufficient thin membrane, InAs could transfer enough strain to the membrane to allow coherent epitaxial growth, something not possible on bulk substrates.
Authors:
Christoph Deneke; Angelo Malachias; Armando Rastelli; Leandro Merces; Minghuang Huang; Francesca Cavallo; Oliver G Schmidt; Max G Lagally
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-9
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  ACS Nano     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-10     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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