Document Detail


Split-gate-structure 1T DRAM for retention characteristic improvement.
MedLine Citation:
PMID:  22121577     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
As the feature size of the conventional 1T-1C DRAM scales down, difficulties of the fabrication process are increasing and it is becoming harder to keep a constant capacitance value for data storage. Capacitor-less 1T DRAM is a promising candidate for the substitution of the conventional 1T-1C DRAM, but its poor retention time is one of the critical issues in its commercialization. In the selection of a bias condition for 1T DRAM, however, it is impossible to choose a gate bias condition that is suitable for both the "1" and "0" hold state data. In this paper, a split gate structure and hold bias scheme are proposed for the simultaneous improvement of the "1" and "0" data retention characteristics. It was confirmed through numerical simulation that this structure has a more than 3 sec retention time. A vertical gate-all-around split-gate structure and its fabrication method are also suggested to achieve high density, low cost, a higher sensing margin, and a longer retention time.
Authors:
Garam Kim; Sang Wan Kim; Kyung-Chang Ryoo; Jeong-Hoon Oh; Min-Chul Sun; Hyun Woo Kim; Dae Woong Kwon; Ji Soo Jang; Sunghun Jung; Jang Hyun Kim; Byung-Gook Park
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  11     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2011 Jul 
Date Detail:
Created Date:  2011-11-29     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  5603-7     Citation Subset:  IM    
Affiliation:
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, San 56-1, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Republic of Korea.
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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