| Simulation studies on the evolution of gallium nitride on a liquid gallium surface under plasma bombardment. | |
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MedLine Citation:
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PMID: 18315225 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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Monte Carlo simulations were conducted to study the formation of gallium-nitride (GaN) layer on liquid gallium (Ga) sputtering target immersed in nitrogen (N(2)) plasma. In the simulation model, N ions were assumed to possess energy equal to the bias voltage applied to the sputtering target with respect to the plasma. The results showed the surface morphology of GaN changed from a relatively smooth GaN on Ga surface at 50 eV N ion energy to a rough surface with GaN dendrites on liquid Ga at 500 eV ion energy. Further increase in N ion energy up to 1 keV resulted in smaller density of GaN dendrites on surface. Increasing surface coverage of Ga by GaN substantially reduced the sputtering yield of Ga from the target. These simulation results were correlated with previously reported experimental observations on liquid Ga surface immersed in the nitrogen plasma of a plasma-sputter-type ion source. |
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Authors:
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M R Vasquez; R E Flauta; M Wada |
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Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: The Review of scientific instruments Volume: 79 ISSN: 0034-6748 ISO Abbreviation: Rev Sci Instrum Publication Date: 2008 Feb |
Date Detail:
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Created Date: 2008-03-04 Completed Date: 2008-04-30 Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 0405571 Medline TA: Rev Sci Instrum Country: United States |
Other Details:
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Languages: eng Pagination: 02B910 Citation Subset: - |
Affiliation:
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Department of Engineering Sciences, College of Engineering, University of the Philippines, Diliman, Quezon City, Philippines. jong@up.edu.ph |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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