Document Detail


Schottky-barrier resistive memory with highly uniform switching.
MedLine Citation:
PMID:  24757996     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
Using stacked GeO/SrTiO resistive memory with high-work-function Ni electrode, forming-free switching, low sub-microW power and highly uniform current distributions (on-off ratio > 1000x) are realized. The Schottky barrier at Ni/GeO(x) interface and current compliance function can effectively stabilize electron hopping between oxygen vacancies to reach uniform voltage and current distributions under a sub-microW operating power.
Authors:
C H Cheng
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  14     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2014 Jul 
Date Detail:
Created Date:  2014-04-24     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  5166-70     Citation Subset:  IM    
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