Document Detail


Scalable fabrication of self-aligned graphene transistors and circuits on glass.
MedLine Citation:
PMID:  21648419     Owner:  NLM     Status:  MEDLINE    
Abstract/OtherAbstract:
Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.
Authors:
Lei Liao; Jingwei Bai; Rui Cheng; Hailong Zhou; Lixin Liu; Yuan Liu; Yu Huang; Xiangfeng Duan
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Publication Detail:
Type:  Journal Article; Research Support, N.I.H., Extramural; Research Support, U.S. Gov't, Non-P.H.S.     Date:  2011-06-14
Journal Detail:
Title:  Nano letters     Volume:  12     ISSN:  1530-6992     ISO Abbreviation:  Nano Lett.     Publication Date:  2012 Jun 
Date Detail:
Created Date:  2012-06-13     Completed Date:  2012-10-15     Revised Date:  2013-06-28    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  2653-7     Citation Subset:  IM    
Affiliation:
Department of Chemistry, University of California, Los Angeles, California 90095, United States.
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MeSH Terms
Descriptor/Qualifier:
Equipment Design
Equipment Failure Analysis
Graphite / chemistry*
Molecular Conformation
Nanostructures / chemistry*,  ultrastructure*
Transistors, Electronic*
Grant Support
ID/Acronym/Agency:
1DP2OD004342-01/OD/NIH HHS; 1DP2OD007279/OD/NIH HHS; DP2 OD004342-01/OD/NIH HHS
Chemical
Reg. No./Substance:
7782-42-5/Graphite
Comments/Corrections

From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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