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Sc(2)O(3), Er(2)O(3), and Y(2)O(3) thin films by MOCVD from volatile guanidinate class of rare-earth precursors.
MedLine Citation:
PMID:  23023387     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Alternative novel precursor chemistries for the vapor phase deposition of rare-earth (RE) oxide thin films were developed by synthesising the homoleptic guanidinate compounds tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-scandium(iii) [Sc(DPDMG)(3)] (), tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-erbium(iii), [Er(DPDMG)(3)] () and tris(N,N'-diisopropyl-2-dimethylamidoguanidinato)-yttrium(iii), [Y(DPDMG)(3)] (). All three compounds are monomeric as revealed by single crystal X-ray diffraction (XRD) analysis, nuclear magnetic resonance (NMR) and electron impact mass spectrometry (EI-MS). The thermal analysis revealed that the compounds are volatile and very stable under evaporation conditions. Therefore the complexes were evaluated as precursors for the growth of Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films, respectively, by metal-organic chemical vapor deposition (MOCVD). Uniform Sc(2)O(3), Er(2)O(3) and Y(2)O(3) films on Si(100) substrates with reproducible quality were grown by MOCVD by the combination of the respective guanidinate precursors and oxygen in the temperature range 350-700 °C. The structural, morphological, compositional and electrical properties of the films were investigated in detail. The most relevant film properties are highlighted in relation to the distinct advantages of the novel precursor chemistries in comparison to the commonly used literature known RE precursors. This study shows that compounds are very good precursors for MOCVD yielding Sc(2)O(3), Er(2)O(3) and Y(2)O(3) thin films which are stoichiometric and display suitable electrical properties for their potential use as high dielectric constant (high-k) materials.
Authors:
Andrian P Milanov; Ke Xu; Stefan Cwik; Harish Parala; Teresa de Los Arcos; Hans-Werner Becker; Detlef Rogalla; Richard Cross; Shashi Paul; Anjana Devi
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-1
Journal Detail:
Title:  Dalton transactions (Cambridge, England : 2003)     Volume:  -     ISSN:  1477-9234     ISO Abbreviation:  Dalton Trans     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-1     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101176026     Medline TA:  Dalton Trans     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Affiliation:
Inorganic Materials Chemistry, Ruhr-University Bochum, D-44801, Bochum, Germany. anjana.devi@rub.de.
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