| Rolled-Up Nanotech: Illumination-Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers. | |
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MedLine Citation:
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PMID: 20652125 Owner: NLM Status: PubMed-not-MEDLINE |
Abstract/OtherAbstract:
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The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/GaAs bilayers was studied. For thicknesses of AlAs below 10 nm, there were two etching regimes for the area under illumination: one at low illumination intensities, in which the etching and releasing proceeds as expected and one at higher intensities in which the etching and any releasing are completely suppressed. The "etch suppression" area is well defined by the illumination spot, a feature that can be used to create heterogeneously etched regions with a high degree of control, shown here on patterned samples. Together with the studied self-limitation effect, the technique offers a way to determine the position of rolled-up micro- and nanotubes independently from the predefined lithographic pattern. |
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Authors:
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Ruxandra M Costescu; Christoph Deneke; Dominic J Thurmer; Oliver G Schmidt |
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Publication Detail:
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Type: Journal Article Date: 2009-09-03 |
Journal Detail:
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Title: Nanoscale research letters Volume: 4 ISSN: 1931-7573 ISO Abbreviation: Nanoscale Res Lett Publication Date: 2009 |
Date Detail:
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Created Date: 2011-06-30 Completed Date: 2011-07-14 Revised Date: 2011-09-02 |
Medline Journal Info:
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Nlm Unique ID: 101279750 Medline TA: Nanoscale Res Lett Country: United States |
Other Details:
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Languages: eng Pagination: 1463-8 Citation Subset: - |
Affiliation:
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Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr, 20, 01069, Dresden, Germany. r.costescu@ifw-dresden.de. |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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