Document Detail


Revelation of Topological Surface States in Bi<sub>2</sub>Se<sub>3</sub></sub> Thin Films by <i>in situ</i> Al Passivation.
MedLine Citation:
PMID:  22147687     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Topological insulators (TIs) are extraordinary materials that possess massless, Dirac-like topological surface states in which backscattering is prohibited due to the strong spin-orbit coupling. However, there have been reports on degradation of topological surface states in ambient condition, which presents a great challenge for probing the original topological surface states after TI materials are prepared. Here, we show that in situ Al passivation inside molecular beam epitaxy (MBE) chamber could inhibit the degradation process and reveal the pristine topological surface states. Dual evidences from Shubnikov-de Hass (SdH) oscillations and weak antilocalization (WAL) effect, originated from the Π Berry phase, suggest that the helically spin-polarized surface states are well preserved by the proposed in situ Al passivation. In contrast, we show the degradation of surface states for the un-passivated control samples, in which the 2D carrier density is increased 39.2% due to ambient <i>n</i>-doping, the SdH oscillations are completely absent and a large deviation from WAL is observed.
Authors:
Murong Lang; Liang He; Faxian Xiu; Xinxin Yu; Jianshi Tang; Yong Wang; Xufeng Kou; Wanjun Jiang; Alexei V Fedorov; Kang L Wang
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2011-12-6
Journal Detail:
Title:  ACS nano     Volume:  -     ISSN:  1936-086X     ISO Abbreviation:  -     Publication Date:  2011 Dec 
Date Detail:
Created Date:  2011-12-7     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101313589     Medline TA:  ACS Nano     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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