Document Detail


Resistance Switching Characteristics of Solid Electrolyte Chalcogenide Ag(2) Se Nanoparticles for Flexible Nonvolatile Memory Applications.
MedLine Citation:
PMID:  22688973     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
Solution-processed mechanically flexible resistive random access memories are fabricated using Ag(2) Se nanoparticles; the fabricated Ag/Ag(2) Se/Au memory devices on flexible poly-ethylene-naphthalate substrates show bipolar switching memory characteristics, with low voltage (<1.5 V) operation, no significant retention loss after 10(5) s, and no degradation in endurance after 10(4) switching cycles, with stable operation even under a mechanical strain of 0.38%.
Authors:
Jaewon Jang; Feng Pan; Kyle Braam; Vivek Subramanian
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-6-12
Journal Detail:
Title:  Advanced materials (Deerfield Beach, Fla.)     Volume:  -     ISSN:  1521-4095     ISO Abbreviation:  -     Publication Date:  2012 Jun 
Date Detail:
Created Date:  2012-6-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9885358     Medline TA:  Adv Mater     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Copyright Information:
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720-1770, USA.
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