Document Detail


Reduction of graphene damages during the fabrication of InGaN/GaN light emitting diodes with graphene electrodes.
MedLine Citation:
PMID:  23036991     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
Although graphene looks attractive to replace indium tin oxide (ITO) in optoelectronic devices, the luminous efficiency of light emitting diodes (LEDs) with graphene transparent conducting electrodes has been limited by degradation in graphene taking place during device fabrication. In this study, it was found that the quality of graphene after the device fabrication was a critical factor affecting the performance of GaN-based LEDs. In this paper, the qualities of graphene after two different device fabrication processes were evaluated by Raman spectroscopy and atomic force microscopy. It was found that graphene was severely damaged and split into submicrometer-scale islands bounded by less conducting boundaries when graphene was transferred onto LED structures prior to the GaN etching process for p-contact formation. On the other hand, when graphene was transferred after the GaN etch and p-contact metallization, graphene remained intact and the resulting InGaN/GaN LEDs showed electrical and optical properties that were very close to those of LEDs with 200 nm thick ITO films. The forward-voltages and light output powers of LEDs were 3.03 V and 9.36 mW at an injection current of 20 mA, respectively.
Authors:
Kisu Joo; Sahng-Kyoon Jerng; Yong Seung Kim; Bumho Kim; Seunghyun Moon; Daeyoung Moon; Gun-Do Lee; Yoon-Kyu Song; Seung-Hyun Chun; Euijoon Yoon
Publication Detail:
Type:  Journal Article     Date:  2012-10-04
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-05     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  425302     Citation Subset:  IM    
Affiliation:
Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon, 443-270, Korea.
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine


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