| Quantitatively Enhanced Reliability and Uniformity of High-ĸ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers. | |
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MedLine Citation:
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PMID: 23387502 Owner: NLM Status: Publisher |
Abstract/OtherAbstract:
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The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-ĸ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates. |
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Authors:
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Vinod K Sangwan; Deep Jariwala; Stephen A Filippone; Hunter J Karmel; James E Johns; Justice M P Alaboson; Tobin J Marks; Lincoln J Lauhon; Mark C Hersam |
Publication Detail:
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Type: JOURNAL ARTICLE Date: 2013-2-7 |
Journal Detail:
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Title: Nano letters Volume: - ISSN: 1530-6992 ISO Abbreviation: Nano Lett. Publication Date: 2013 Feb |
Date Detail:
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Created Date: 2013-2-7 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 101088070 Medline TA: Nano Lett Country: - |
Other Details:
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Languages: ENG Pagination: - Citation Subset: - |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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