Document Detail

Quantitatively Enhanced Reliability and Uniformity of High-ĸ Dielectrics on Graphene Enabled by Self-Assembled Seeding Layers.
MedLine Citation:
PMID:  23387502     Owner:  NLM     Status:  Publisher    
The full potential of graphene in integrated circuits can only be realized with a reliable ultra-thin high-ĸ top-gate dielectric. Here, we report the first statistical analysis of the breakdown characteristics of dielectrics on graphene, which allows the simultaneous optimization of gate capacitance and the key parameters that describe large-area uniformity and dielectric strength. In particular, vertically heterogeneous and laterally homogenous Al2O3 and HfO2 stacks grown via atomic-layer deposition and seeded by a molecularly thin perylene-3,4,9,10-tetracarboxylic dianhydride organic monolayer exhibit high uniformities (Weibull shape parameter β > 25) and large breakdown strengths (Weibull scale parameter, EBD > 7 MV/cm) that are comparable to control dielectrics grown on Si substrates.
Vinod K Sangwan; Deep Jariwala; Stephen A Filippone; Hunter J Karmel; James E Johns; Justice M P Alaboson; Tobin J Marks; Lincoln J Lauhon; Mark C Hersam
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2013-2-7
Journal Detail:
Title:  Nano letters     Volume:  -     ISSN:  1530-6992     ISO Abbreviation:  Nano Lett.     Publication Date:  2013 Feb 
Date Detail:
Created Date:  2013-2-7     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088070     Medline TA:  Nano Lett     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine

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