Document Detail

Programmable complementary resistive switching behaviours of a plasma-oxidised titanium oxide nanolayer.
MedLine Citation:
PMID:  23187889     Owner:  NLM     Status:  Publisher    
Through the one-step plasma oxidation of TiN thin films at room temperature (a simple semiconductor technology compatible method), a partly oxidised structure of titanium oxynitride (TiN(x)O(y)) with a TiO(2-x) nanolayer on top has been prepared for non-volatile resistive switching memory devices. The fabricated Pt/TiO(2-x)/TiN(x)O(y)/TiN memory devices demonstrate complementary resistive switching behaviours within an operation voltage of 1 V. The complementary resistive switching behaviours can be explained by redistribution of the oxygen vacancies between the Pt/TiO(2-x) top interface and the TiO(2-x)/TiN(x)O(y) bottom interface in the TiO(2-x) nanolayer. A model concerning the resistive switching mechanism as well as a recover program of a failed device is also proposed. Our work provides a possible cost-efficient solution to suppress the sneak-path problem in nanoscale crossbar memory arrays.
Guangsheng Tang; Fei Zeng; Chao Chen; Hongyan Liu; Shuang Gao; Cheng Song; Yisong Lin; Guang Chen; Feng Pan
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-11-27
Journal Detail:
Title:  Nanoscale     Volume:  -     ISSN:  2040-3372     ISO Abbreviation:  Nanoscale     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-11-28     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101525249     Medline TA:  Nanoscale     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Key Laboratory of Advanced Materials (MOE), Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, P.R. China.
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