Document Detail


Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostructures.
MedLine Citation:
PMID:  21034095     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
This paper investigated the effect of atomic force microscopy probe pressure on capacitance-voltage (C-V) and two-dimensional electron gas (2DEG) characteristics. Based on the experimental results, first principles and charge control model calculations were carried out to explore the origin of the changes in C-V and 2DEG characteristics. It is found that the strain of AlGaN induced by the probe pressure was very limited, thus it did not change the C-V characteristic and 2DEG density. The change of threshold voltage and 2DEG density is mainly attributed to the variation of surface barrier height, which is sensitive to the gap between the probe and the sample. Therefore, to map the electronic properties distribution, one should adopt constant force mode to eliminate the effect of probe pressure.
Authors:
Jihua Zhang; Huizhong Zeng; Min Zhang; Wei Liu; Zuofan Zhou; Hongwei Chen; Chuanren Yang; Wanli Zhang; Yanrong Li
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  The Review of scientific instruments     Volume:  81     ISSN:  1089-7623     ISO Abbreviation:  Rev Sci Instrum     Publication Date:  2010 Oct 
Date Detail:
Created Date:  2010-11-01     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  0405571     Medline TA:  Rev Sci Instrum     Country:  United States    
Other Details:
Languages:  eng     Pagination:  103704     Citation Subset:  -    
Affiliation:
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China. jhzhang@uestc.edu.cn
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