Document Detail

P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers.
MedLine Citation:
PMID:  24105513     Owner:  NLM     Status:  Publisher    
High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with dot-patterned GaAs contact layer and surface rough structure are presented in this article. Initial LED structure of p-GaP/AlGaInP/GaAs is epitaxially grown using metal organic chemical vapor deposition technique. Using novel twice transferring process, the p-GaP layer is remained at the top side as both the current spreading and-window layer. Dot patterned GaAs contact dots are formed between main structure and rear mirror to improve light reflection and current spreading. Moreover, the surface of p-GaP window is further textured by nano-sphere lithography technique for improving the light extraction. Significant improvement in output power is found for AlGaInP LEDs with GaAs contact dots and roughened p-GaP window as compared with those of LEDs with traditional n-side up and p-side up structures without roughened surfaces.
Ray-Hua Horng; Bing-Rui Wu; Chi-Feng Weng; Parvaneh Ravadgar; Tzong-Ming Wu; Sing-Ping Wang; Jr-Hau He; Tsung-Hsien Yang; Yi-Ming Chen; Tzu-Chieh Hsu; Ai-Sen Liu; Dong-Sing Wuu
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Publication Detail:
Journal Detail:
Title:  Optics express     Volume:  21     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2013 Aug 
Date Detail:
Created Date:  2013-10-9     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  -    
Other Details:
Languages:  ENG     Pagination:  19668-19674     Citation Subset:  -    
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine

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