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Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride.
MedLine Citation:
PMID:  22344150     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with a density of more than 4.6×10<sup>12</sup>/cm<sup>2</sup> was investigated. The white EL illustrates enhanced light emission with increasing applied voltage and can be divided into two components, a dominant peak at ∼710  nm and weak one at ∼550  nm, which are close to those of the PL spectra optically pumped by the 325 and 488 nm lines, respectively. Based on the PL characteristics, we propose that the dominant EL band arises from the band-to-band recombination in the dense Si nanodots where quantum confinement plays a decisive role in the light emission, whereas the weak EL band originates from the radiative Si dangling bond (K<sup>0</sup>) centers in the silicon nitride matrix.
Authors:
R Huang; J Song; X Wang; Y Q Guo; C Song; Z H Zheng; X L Wu; Paul K Chu
Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Optics letters     Volume:  37     ISSN:  1539-4794     ISO Abbreviation:  Opt Lett     Publication Date:  2012 Feb 
Date Detail:
Created Date:  2012-02-20     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  7708433     Medline TA:  Opt Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  692-4     Citation Subset:  IM    
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