| Origin of strong white electroluminescence from dense Si nanodots embedded in silicon nitride. | |
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MedLine Citation:
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PMID: 22344150 Owner: NLM Status: In-Data-Review |
Abstract/OtherAbstract:
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Strong white electroluminescence (EL) from SiN-based devices containing Si nanodots with a density of more than 4.6×10<sup>12</sup>/cm<sup>2</sup> was investigated. The white EL illustrates enhanced light emission with increasing applied voltage and can be divided into two components, a dominant peak at ∼710 nm and weak one at ∼550 nm, which are close to those of the PL spectra optically pumped by the 325 and 488 nm lines, respectively. Based on the PL characteristics, we propose that the dominant EL band arises from the band-to-band recombination in the dense Si nanodots where quantum confinement plays a decisive role in the light emission, whereas the weak EL band originates from the radiative Si dangling bond (K<sup>0</sup>) centers in the silicon nitride matrix. |
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Authors:
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R Huang; J Song; X Wang; Y Q Guo; C Song; Z H Zheng; X L Wu; Paul K Chu |
Publication Detail:
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Type: Journal Article |
Journal Detail:
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Title: Optics letters Volume: 37 ISSN: 1539-4794 ISO Abbreviation: Opt Lett Publication Date: 2012 Feb |
Date Detail:
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Created Date: 2012-02-20 Completed Date: - Revised Date: - |
Medline Journal Info:
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Nlm Unique ID: 7708433 Medline TA: Opt Lett Country: United States |
Other Details:
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Languages: eng Pagination: 692-4 Citation Subset: IM |
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From MEDLINE®/PubMed®, a database of the U.S. National Library of Medicine
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