Document Detail


Organic Vapor Passivation of Silicon at Room Temperature.
MedLine Citation:
PMID:  23355317     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
A simple, inexpensive, efficient, and scalable method to create air-stable organic surface passivation layers on silicon using a vapor-phase treatment is demonstrated. A variant of initiated chemical vapor deposition is used to synthesize a thin film that acts as both a passivation layer and an antireflective coating. The lowest surface recombination velocity reported to date is achieved and maintained during prolonged exposure to air.
Authors:
Rong Yang; Tonio Buonassisi; Karen K Gleason
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Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2013-1-28
Journal Detail:
Title:  Advanced materials (Deerfield Beach, Fla.)     Volume:  -     ISSN:  1521-4095     ISO Abbreviation:  Adv. Mater. Weinheim     Publication Date:  2013 Jan 
Date Detail:
Created Date:  2013-1-28     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9885358     Medline TA:  Adv Mater     Country:  -    
Other Details:
Languages:  ENG     Pagination:  -     Citation Subset:  -    
Copyright Information:
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Affiliation:
Department of Chemical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA, 02139, USA.
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