Document Detail


Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence Electron Energy Loss Spectroscopy.
MedLine Citation:
PMID:  23058502     Owner:  NLM     Status:  Publisher    
Abstract/OtherAbstract:
High-resolution monochromated electron energy loss spectroscopy (EELS) at subnanometric spatial resolution and <200 meV energy resolution has been used to assess the valence band properties of a distributed Bragg reflector multilayer heterostructure composed of InAlN lattice matched to GaN. This work thoroughly presents the collection of methods and computational tools put together for this task. Among these are zero-loss-peak subtraction and nonlinear fitting tools, and theoretical modeling of the electron scattering distribution. EELS analysis allows retrieval of a great amount of information: indium concentration in the InAlN layers is monitored through the local plasmon energy position and calculated using a bowing parameter version of Vegard Law. Also a dielectric characterization of the InAlN and GaN layers has been performed through Kramers-Kronig analysis of the Valence-EELS data, allowing band gap energy to be measured and an insight on the polytypism of the GaN layers.
Authors:
A Eljarrat; S Estradé; Z Gačević; S Fernández-Garrido; E Calleja; C Magén; F Peiró
Publication Detail:
Type:  JOURNAL ARTICLE     Date:  2012-10-12
Journal Detail:
Title:  Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada     Volume:  -     ISSN:  1435-8115     ISO Abbreviation:  Microsc. Microanal.     Publication Date:  2012 Oct 
Date Detail:
Created Date:  2012-10-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  9712707     Medline TA:  Microsc Microanal     Country:  -    
Other Details:
Languages:  ENG     Pagination:  1-12     Citation Subset:  -    
Affiliation:
Laboratory of Electron NanoScopies, LENS-MIND-IN2UB, Dept. Electrónica, Universitat de Barcelona, Marti i Franqués 1, Barcelona, Spain.
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