Document Detail


Optimization of chemical displacement deposition of copper on porous silicon.
MedLine Citation:
PMID:  23421274     Owner:  NLM     Status:  In-Process    
Abstract/OtherAbstract:
Copper (II) sulfate was used as a source of copper to achieve uniform distribution of Cu particles deposited on porous silicon. Layers of the porous silicon were formed by electrochemical anodization of Si wafers in a mixture of HF, C3H7OH and deionized water. The well-known chemical displacement technique was modified to grow the copper particles of specific sizes. SEM and XRD analysis revealed that the outer surface of the porous silicon was covered with copper particles of the crystal orientation inherited from the planes of porous silicon skeleton. The copper crystals were found to have the cubic face centering elementary cell. In addition, the traces of Cu2O cubic primitive crystalline phases were identified. The dimensions of Cu particles were determined by the Feret's analysis of the SEM images. The sizes of the particles varied widely from a few to hundreds of nanometers. A phenomenological model of copper deposition was proposed.
Authors:
Hanna Bandarenka; Sergey Redko; Paolo Nenzi; Marco Balucani; Vitaly Bondarenko
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  12     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2013-02-20     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  8725-31     Citation Subset:  IM    
Affiliation:
Belarussian State University of Informatics and Radioelectronics, Brovka Street 6, Minsk 220013, Belarus.
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