Document Detail

Optical second-harmonic generation induced by a dc electric field at the Si-SiO(2) interface.
MedLine Citation:
PMID:  19855549     Owner:  NLM     Status:  In-Data-Review    
For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si-SiO(2) interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate that the MOS technique of dc electric-field application to the Si-SiO(2) interface can be effectively used for studying electroinduced effects on SHG.
O A Aktsipetrov; A A Fedyanin; V N Golovkina; T V Murzina
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Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Optics letters     Volume:  19     ISSN:  0146-9592     ISO Abbreviation:  Opt Lett     Publication Date:  1994 Sep 
Date Detail:
Created Date:  2009-10-26     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  7708433     Medline TA:  Opt Lett     Country:  United States    
Other Details:
Languages:  eng     Pagination:  1450-2     Citation Subset:  -    
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