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Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers.
MedLine Citation:
PMID:  21263592     Owner:  NLM     Status:  In-Data-Review    
Abstract/OtherAbstract:
The use of nanowires as active medium seems very promising for the development of high brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire layers may lead to a high light extraction efficiency. We hereafter discuss the anisotropic properties of dense arrays of molecular beam epitaxy (MBE) grown gallium nitride (GaN) nanowires and the consequences on the optical design of nanowire based LEDs. In particular we show numerically that light extraction efficiency as high as 72% can be expected for GaN nanowires layer grown on a low cost Si substrate.
Authors:
Anne-Line Henneghien; Gabriel Tourbot; Bruno Daudin; Olivier Lartigue; Yohan Désières; Jean-Michel Gérard
Publication Detail:
Type:  Journal Article    
Journal Detail:
Title:  Optics express     Volume:  19     ISSN:  1094-4087     ISO Abbreviation:  Opt Express     Publication Date:  2011 Jan 
Date Detail:
Created Date:  2011-01-25     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101137103     Medline TA:  Opt Express     Country:  United States    
Other Details:
Languages:  eng     Pagination:  527-39     Citation Subset:  IM    
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