Document Detail

One-step graphene coating of heteroepitaxial GaN films.
MedLine Citation:
PMID:  23059535     Owner:  NLM     Status:  In-Data-Review    
Today, state-of-the-art III-Ns technology has been focused on the growth of c-plane nitrides by metal-organic chemical vapor deposition (MOCVD) using a conventional two-step growth process. Here we show that the use of graphene as a coating layer allows the one-step growth of heteroepitaxial GaN films on sapphire in a MOCVD reactor, simplifying the GaN growth process. It is found that the graphene coating improves the wetting between GaN and sapphire, and, with as little as ∼0.6 nm of graphene coating, the overgrown GaN layer on sapphire becomes continuous and flat. With increasing thickness of the graphene coating, the structural and optical properties of one-step grown GaN films gradually transition towards those of GaN films grown by a conventional two-step growth method. The InGaN/GaN multiple quantum well structure grown on a GaN/graphene/sapphire heterosystem shows a high internal quantum efficiency, allowing the use of one-step grown GaN films as 'pseudo-substrates' in optoelectronic devices. The introduction of graphene as a coating layer provides an atomic playground for metal adatoms and simplifies the III-Ns growth process, making it potentially very useful as a means to grow other heteroepitaxial films on arbitrary substrates with lattice and thermal mismatch.
Jae-Kyung Choi; Jae-Hoon Huh; Sung-Dae Kim; Daeyoung Moon; Duhee Yoon; Kisu Joo; Jinsung Kwak; Jae Hwan Chu; Sung Youb Kim; Kibog Park; Young-Woon Kim; Euijoon Yoon; Hyeonsik Cheong; Soon-Yong Kwon
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Publication Detail:
Type:  Journal Article     Date:  2012-10-11
Journal Detail:
Title:  Nanotechnology     Volume:  23     ISSN:  1361-6528     ISO Abbreviation:  Nanotechnology     Publication Date:  2012 Nov 
Date Detail:
Created Date:  2012-10-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101241272     Medline TA:  Nanotechnology     Country:  England    
Other Details:
Languages:  eng     Pagination:  435603     Citation Subset:  IM    
School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
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