Document Detail

Ohmic contact effect of Ag-nanodots on quantum efficiency of Si solar cell.
MedLine Citation:
PMID:  22966609     Owner:  NLM     Status:  In-Process    
The authors investigated Si solar cell with the inclusion of nano-Ag dots using the ink-jet printer. These nano-Ag dots were used for the Ohmic contact layer on phospho-silicate glass layer, which was not removed after the formation of Si emitter layer by phosphorus diffusion process. The SiNx layer deposited on the nano-Ag dots shows the catalyst selective growth and so the layer formed beneath of nano-Ag dots. The photoreflectances show that the long wavelength from 360 nm to 1200 nm tends to be increased as the density of the nano-Ag is increased. In case of short wavelength from 294 nm to 367 nm, it shows the opposite trend, indicating the plasmon effect of the nano-Ag. As embedding the nano-Ag dots on the phospho-silicate glass layer, the blocked Ohmic contact was opened and the quantum efficiency of 14.4% was achieved, which is higher than the reference sample of 12.72% without the glass layer. The nano-Ag dots form the good Ohmic contact and also enhance the light conversion efficiency with the formation of surface plasmon.
Jaeho Choi; Bhaskar Parida; Hyung Yong Ji; Seungil Park; Keunjoo Kim
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Publication Detail:
Type:  Journal Article; Research Support, Non-U.S. Gov't    
Journal Detail:
Title:  Journal of nanoscience and nanotechnology     Volume:  12     ISSN:  1533-4880     ISO Abbreviation:  J Nanosci Nanotechnol     Publication Date:  2012 Jul 
Date Detail:
Created Date:  2012-09-12     Completed Date:  -     Revised Date:  -    
Medline Journal Info:
Nlm Unique ID:  101088195     Medline TA:  J Nanosci Nanotechnol     Country:  United States    
Other Details:
Languages:  eng     Pagination:  5552-7     Citation Subset:  IM    
Department of Mechanical Engineering and Research Center of Industrial Technology, Chonbuk National University, Jeonju 561-756, R. O. Korea.
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